luminescence center造句
例句与造句
- The photoluminescence spectra were found to have the peak at 360nm and 675nm . we discuss the exciting spectrum and luminescence center separately . we take ito as the underlay material
在光致发光测定中,我们得到了位于360nm和675nm的发光峰,并讨论他们的激发谱和发光中心。 - The aluminates are used as the base and the rare earth materials are used as the luminescence center and trap center . the excitation resource can be visible light and man - made light
它以铝酸盐陶瓷材料为基质，以稀土材料作为掺杂元素形成发光中心和陷阱中心，激发光源可以为目光或人造光源。 - Site - select spectra indicate that the eu3 + in nanoparcles < wp = 7 > formed two kinds of luminescence centers with different branch ratios of 5d0 - 7fj . the ratio of varied with different excitation
用不同能量激发zns时5d0 7f0与5d0 7f1发光分支比不同，表明激发能量对两类发光中心的激发具有选择性。 - Under forward bias , the el spectra are found to have a luminescence band peaked at 510 nm of si - sic > 2 films and al - si - sic > 2 films , which originates mainly from the luminescence centers of some defects in the siox
对薄膜进行了乩谱的测量。发现了si - sio _ 2薄膜和al - si - sio _ 2薄膜均存在很强的峰位在510nm的电致发光( el )谱峰。 - Electron - hole pairs are created by photo - excitation in the nanoscale silicon units , and then recombined radiatively in the thin oxide layers , giving a green or red pl through the luminescence centers outside the nanoscale
不掺sb的szoz与ax层中的发光中心发射的光子能量为2 zcv ，掺sb的sfloz与引x层中的发光中心发射的光子能量为1 - It's difficult to find luminescence center in a sentence. 用luminescence center造句挺难的
- The results show that with the doping of some metal ( such as al ) , the metal elements will exist by the form of atom clusters by adjusting the sputtering parameters . it should sharply increase the intensity of el and not change the luminescence centers
结果表明在硅基薄膜中掺入适量的金属(例如：铝) ，并使其以团簇的形式均匀弥散在薄膜中，有可能既不改变薄膜的发光中心，又可大大提高其发光效率。 - By the aid of pl , ple and el , the influence of the defects , luminescence centers and the structure on luminescence of the films had been investigated , especially on the onset of the bias voltage , the intensity of el , and the efficiency of the el
通过对上述薄膜的pl 、 ple以及el的分析，研究了此头薄膜中所存在的缺陷及发光中心，以及结构对发光的影响。着重讨论了掺铝对薄膜电致发光的启动电压、发光强度、发光效率的影响。 - The intensity of distinguishable pl peaks increased with the increasing n content in the films , and the central positions of the above two pl bands were influenced by both the content of o and n . it is suggested that these pl were originated from luminescence centers related to si - o and 0 - si - n defects
分立峰强度随薄膜中的氮含量增加而升高，荧光带中心位置受到氧、氮含量的影响，分析表明其荧光起源于si - o和n - si - o等复合缺陷组态能级间的辐射跃迁。 - The aluminates are used as the base and the rare earth materials are used as the luminescence center and trap center . the excitation resource can be visible light and man - made light , so this type of long persistent phosphor has the advantages of no - radiation and no need of electricity
它以铝酸盐陶瓷材料为基质，以稀土材料作为掺杂元素形成发光中心和陷阱中心，激发源可以为日光或人造光源，无污染，不消耗电能，是一种高效节能的固体发光显示材料。 - The complex model of luminescence centers and quantum confinement has been proposed to interpret the origin of the green and red - emitting of the ps after modification . the deduction is supported by analyzing the morphology and the surface species of the modified samples through afm , sem , and ftir , xps
通过afm 、 sem及ftir 、 xps对这两种多孔硅样品进行表面形貌和化学成分分析，采用发光中心（ lc ）量子限制效应的复合模型对上述修饰多孔硅的pl峰移现象进行了理论说明。 - Passivation on the surface of nanocrystalline zno was responsible for an energy potential high enough to prevent surface states trapping the electrons or holes photogenerated , it should block the pathway to form the luminescence centers as the vo * * and [ vo * , electron ] or [ vo * * , two electrons ] complex . a new visible luminescence mechanism was presented
纳米氧化锌（ zno ）表面的钝化实际上是在氧化锌（ zno ）的核和表面之间形成了大的势垒阻止表面缺陷捕获光生电子或光生空穴形成发光中心vo * *和[ vo * ， electron ]或[ vo * * ， twoelectrons ]复合体，同时，提出了一种新的可见发光机制，很好地解释了实验中观察到的现象。 - As for the pl mechanism , except the red band , the rest are all originated from luminescence defects related to impurity , and the luminescence centers are affected by configuration of impurities , while the red emitting band may attribute to the quantum confinement effect of nano - si , but will also rely on its interface characteristic
就发光机制而言，除红光宽带外，均起源于氧、氮掺杂引起的缺陷发光中心，发光中心受杂质组态影响，红光宽带可能联系到量子限制效应，同时还依赖于界面特性。 - The study indicate that sral2o4 : tb3 + phosphor can be composed from 1250c to 1550c , the phosphor ' s luminance reduce and the afterglow time shorten along with the compounding temperature ; the better luminance and afterglow with the better crystalloid degree ; the luminescence of tb3 + ion in the sral2o4 is coming from the transition of 5d4 - 7fj ( j = 6 , 5 , . . . . . . 0 ) ; the afterglow is because of the electron that seized in the trap released which integrate with the luminescence center
合成发光体亮度随合成温度的降低而逐渐降低，余辉时间逐渐缩短；当合成物具有较好的结晶度时，合成的发光粉不仅发光亮度高而且余辉时间长； tb ~ ( 3 + )离子在sral _ 2o _ 4基质晶格中的发光主要来自于~ 5d _ 4 ~ 7f _ j ( j = 6 ， 5 ， … … 0 )的跃迁；其余辉是因为不断有被陷阱所俘获的电子释放出来与发光中心复合。